型号:

IRFR12N25DTRPBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 250V 14A DPAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRFR12N25DTRPBF PDF
标准包装 2,000
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 250V
电流 - 连续漏极(Id) @ 25° C 14A
开态Rds(最大)@ Id, Vgs @ 25° C 260 毫欧 @ 8.4A,10V
Id 时的 Vgs(th)(最大) 5V @ 250µA
闸电荷(Qg) @ Vgs 35nC @ 10V
输入电容 (Ciss) @ Vds 810pF @ 25V
功率 - 最大 144W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 D-Pak
包装 带卷 (TR)
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